to-220f plastic-encapsulate transistors 3DD13003F transistor ( npn ) feature power switching applications maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current -continuous 1.5 a p c collector dissipation 2 w t j , t stg junction and storage temperature -55 ~+ 150 electrical characteristics (t a =25 unless other wise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br) cbo ic= 5m a,i e =0 700 v collector-emitter breakdown voltage v (br) ceo ic= 10 ma,i b =0 400 v emitter-base breakdown voltage v (br) ebo i e = 2 ma,i c =0 9 v collector cut-off current i cbo v cb =700v,i e =0 1 m a collector cut-off current i ceo v ce =400v, i b =0 0. 5 m a emitter cut-off current i ebo v eb =9v, i c =0 1 m a h fe (1) v ce =5v,i c =0.5 a 8 40 dc current gain h fe (2) v ce =5v,i c =1.5 a 5 collector-emitter saturation voltage v ce (sat) i c =1a,i b =250ma 0.6 v base-emitter saturation voltage v be (sat) i c =1a, i b =250ma 1.2 v transition frequency f t v ce =10v,ic=100ma f =1mhz 5 mhz fall time t f 0.5 s storage time t s i c =250ma i c =1a,i b1 =-i b2 =0.2a v cc =100v 2 4 s classification of h fe (1) rank range 8-10 10-15 15-20 20-25 25-30 30-35 35-40 to-220f 1. base 2. collector 3. emitter classification of t s rank a1 a2 b1 b2 range 2-2.5 ( s ) 2.5-3( s ) 3-3.5( s ) 3.5-4 ( s ) r ja t hermal resistance from junction to ambien t 62.5 /w 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,mar,2013
|
